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simulation the effects of temperature and magnetic field on the density of surface states in semiconductor heterostructures
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نویسنده
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erkaboev ulugbek ,sharibaev nosir ,dadamirzaev muzaffar ,rakhimov rustamjon
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منبع
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پژوهش فيزيك ايران - 2024 - دوره : 24 - شماره : 3 - صفحه:69 -74
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چکیده
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In this article, the physical properties of the surface of the cds/si(p) material under the influence of a magnetic field were studied . the dependence of the density of surface states of the p-type si(p) semiconductor on the magnetic field and temperature has been studied. for the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. mathematical modeling of the processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, whithin the band gap of silicon. the possibility of calculating discrete energy levels is demonstrated.
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کلیدواژه
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density of surface states ,magnetic field ,heterostructure ,deep levels ,capacitance-voltage characteristic ,mathematical modeling ,temperature
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آدرس
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namangan institute of engineering and technology, uzbekistan, namangan institute of engineering and technology, uzbekistan, namangan institute of engineering and technology, uzbekistan, namangan institute of engineering and technology, uzbekistan
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پست الکترونیکی
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rgrakhimov@gmail.com
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simulation the effects of temperature and magnetic field on the density of surface states in semiconductor heterostructures
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Authors
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Abstract
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in this article, the physical properties of the surface of the cds/si(p) material under the influence of a magnetic field were studied . the dependence of the density of surface states of the p-type si(p) semiconductor on the magnetic field and temperature has been studied. for the first time, a mathematical model has been developed to determine the temperature dependence of the density of surface states of a semiconductor under the influence of a strong magnetic field. mathematical modeling of the processes was carried out using experimental values of the continuous energy spectrum of the density of surface states, obtained at various low temperatures and strong magnetic fields, whithin the band gap of silicon. the possibility of calculating discrete energy levels is demonstrated.
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