synthesis of high transparency of f doped nio monocrystalline thin films by spray deposition

The main objective of this work is to investigate a new material based on fluorine doped nio thin films by spray deposition technique. nickel nitrate hexahydrate ni(no3)2.6h2o and ammonium fluoride (nhf4) with a ratio of f/ni = 0.04 were used to prepare f doped nio. the structural, optical and electrical properties of f doped nio thin films were investigated with different nio:f solution volumes of 5, 10, 15 and 20 ml using the spray technique. the prepared f doped nio thin films have a monocrystalline nature with a cubic structure; the (111) diffraction peak is the preferred orientation; the maximum crystallite size is 19.21 nm obtained for 20 ml. the optical property shows that the all the prepared f doped nio thin films have a good transmittance of about 80 % in the visible region. the f doped nio thin films deposited with 20 ml have a minimum optical gap energy of 3.51 ev and the highest value of urbach energy of 0,689 mev. however, the thin film prepared with 5 ml has a minimum electrical resistivity of 231 ω.cm, which can be used as a gas sensing.

synthesis of high transparency of f doped nio monocrystalline thin films by spray deposition

the main objective of this work is to investigate a new material based on fluorine doped nio thin films by spray deposition technique. nickel nitrate hexahydrate ni(no3)2.6h2o and ammonium fluoride (nhf4) with a ratio of f/ni = 0.04 were used to prepare f doped nio. the structural, optical and electrical properties of f doped nio thin films were investigated with different nio:f solution volumes of 5, 10, 15 and 20 ml using the spray technique. the prepared f doped nio thin films have a monocrystalline nature with a cubic structure; the (111) diffraction peak is the preferred orientation; the maximum crystallite size is 19.21 nm obtained for 20 ml. the optical property shows that the all the prepared f doped nio thin films have a good transmittance of about 80 % in the visible region. the f doped nio thin films deposited with 20 ml have a minimum optical gap energy of 3.51 ev and the highest value of urbach energy of 0,689 mev. however, the thin film prepared with 5 ml has a minimum electrical resistivity of 231 ω.cm, which can be used as a gas sensing.