effect of ti-doping on thermo-optical and electronic properties of ws2 nanosheets

Ti-doped tungsten disulfide (ws2) nanosheet-semiconductor is studied for thermo- optical and electronic properties. thermal diffusivity (d) thermal conductivity (κ) and absorbance were determined as a function of ti- dopant (0, 7, 14, and 28%). the research focused on the effect of different ti-dopant concentrations, and we tried to evaluate the thermal parameters using photohermal lens technique as a simple, non-contacting method. the results show an increase in the values of d by 5 times with an increment of ti-dopant from 0% to 28%. the addition of ti did not produce any additional phase in the material, although, the separation of the crystallographic planes reduced, indicating the presence of the ti atoms in the crystal structure.