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The Impact of Doping on the Anti-Resonance Effects of A^1_1g Mode of Inse
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نویسنده
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Zolfaghari Mahmoud
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منبع
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International Journal Of Optics And Photonics - 2019 - دوره : 13 - شماره : 2 - صفحه:171 -180
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چکیده
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A comparative study of antiresonance effects in inse and inse doped with gas, using the resonant raman spectroscopy is presented. the nonpolar optical phonon of a^1_1g symmetry in inse exhibits a pronounced decrease in the raman cross-section at excitation energy 2.585 ev. in inse doped with gas samples, it is found that the anti-resonance behavior decreases as doping contents are increased. to account these observations, a model is applied to explain and interpret the raman intensity evolution versus incident photon energy. the agreement between theory and experiment is good.
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کلیدواژه
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Anti-Resonance ,Inse ,Gas ,Raman Scattering
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آدرس
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University Of Sistan And Baluchestan, Department Of Physics, Iran
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پست الکترونیکی
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mzolfaghari@phys.usb.ac.ir
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Authors
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