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   The Impact of Doping on the Anti-Resonance Effects of A^1_1g Mode of Inse  
   
نویسنده Zolfaghari Mahmoud
منبع International Journal Of Optics And Photonics - 2019 - دوره : 13 - شماره : 2 - صفحه:171 -180
چکیده    A comparative study of antiresonance effects in inse and inse doped with gas, using the resonant raman spectroscopy is presented. the nonpolar optical phonon of a^1_1g symmetry in inse exhibits a pronounced decrease in the raman cross-section at excitation energy 2.585 ev. in inse doped with gas samples, it is found that the anti-resonance behavior decreases as doping contents are increased. to account these observations, a model is applied to explain and interpret the raman intensity evolution versus incident photon energy. the agreement between theory and experiment is good.
کلیدواژه Anti-Resonance ,Inse ,Gas ,Raman Scattering
آدرس University Of Sistan And Baluchestan, Department Of Physics, Iran
پست الکترونیکی mzolfaghari@phys.usb.ac.ir
 
     
   
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