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   Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors  
   
نویسنده Razi S. ,Asgari A. ,Ghasemi F.
منبع international journal of optics and photonics - 2010 - دوره : 4 - شماره : 2 - صفحه:77 -86
چکیده    In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure.
کلیدواژه Photo-detectors ,GaN quantum dots ,Temperature effects ,Thermal effects.
آدرس university of tabriz, Research Institute for Applied Physics, Photonics Group, ایران, university of tabriz, Research Institute for Applied Physics, Photonics Group, ایران. University of Western Australia, School of Electrical, Electronic and Computer Engineering, Australia, university of tabriz, Research Institute for Applied Physics, Photonics Group, ایران
 
 

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