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   Photoexcited Carrier Lifetime and Refractive Nonlinearity in Direct and Indirect Band Gap Crystals on the Z-Scan Technique  
   
نویسنده Gaur A. ,Sharma D. ,Gaur P. ,Malik B.P. ,Singh N.
منبع international journal of optics and photonics - 2010 - دوره : 4 - شماره : 2 - صفحه:69 -76
چکیده    The Photoexcited carrier lifetime ( tau) and peak to valley transmission difference (Delta/ T p-v) in direct and indirect band gap crystals has been investigated by the use of single beam open and closed aperture z-scan technique using frequency doubled Nd:YAG laser. The peak to valley transmission difference (Delta/ T p-v) is found to be of the order of 102 in case of direct band gap crystals and of the order of 10-3 in case of indirect band gap crystals. The carrier life time ( tau) is found to be in nanoseconds range in case of direct band gap crystals and picoseconds range in case of indirect band gap crystals. Lower value of ( tau) and (Delta/ T p-v) in case of indirect band gap crystals can be attributed to the reduction in the value of carrier density (N) and small value of nonlinear phase shift (Delta/ varphi), respectively.
کلیدواژه Direct and indirect band gap crystals ,Nonlinear refraction ,Nonlinear phase shift ,Peak to valley transmission difference ,Photo excited carrier life time.
آدرس Hindu P.G. College, Department of Physics, India, B.M. Institute of Engineering and Technology, Department of Physics, India, T.C.M. College of Engineering, Department of Physics, India, Deenbandhu Chhotu Ram University of Science and Technology, Department of Physics, India, Raja Ramanna Centre for Advanced Technology (CAT), Laser Systems Engineering Division (L S E D ), India
 
 

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