تعیین پارامترهای مناسب فرآیند کندوپاش فلز مولیبدنیوم و بررسی اثر لایه ای نازک از آن، برروی گسیل الکترون ها از آرایه ی گسیل میدان متشکل از نانونوک-های سیلیکانی

Molybdenum (mo) thin films are deposited using rf sputtering technique, and the effect of operational pressure and rf power on resistivity of the films are investigated. point of minimum resistivity is determined, and is used to sputter a thin layer of mo on top of a pre-fabricated, oxidation sharpened, silicon field emitter array (si-fea). geometric and field emission properties of the arrays are investigated before and after deposition of 100nm mo thin film. i-v characteristics of the feas are measured and presented. it is shown that the mo-covered array shows better emission properties and lower turn-on voltage ( < 190v), compared to the simple si-fea.